Control and synchronous MOSFET, and a Schottky body diode in PQFN package

Fairchild Semiconductor has developed the FDMS36xxS family of power stage dual asymmetric MOSFET modules. The FDMS36xxS family incorporates a control and synchronous MOSFET, and a monolithic Schottky body diode in a PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (SyncFET) (Q2) have been designed to provide optimal power efficiency for output currents up to 30 Amps. By integrating these devices into one module, the FDMS36xxS family reduces board space by replacing two or more 5mm x 6mm PQFN, S08 and DPAK packages.

The FDMS36XXS family of products is designed using Fairchild's charge-balanced device architecture (Shielded Gate Technology) and advanced packaging technology to achieve sub-2 milli Ohms low side RDS (ON) at high performance computing rated breakdown voltages. The product family is optimized to minimize the combination of conduction and switching losses from 300kHz to 600KHz for point-of-load and multi-phase synchronous buck DC-DC applications.

Devices in the FDMS36xxS family currently include the FDMS3602S and FDMS3604AS PowerTrench power stage asymmetric dual N-channel MOSFETs. The FDMS36xxS family is RoHS-compliant.

Availability: Now.
Pricing: FDMS3602S $1.86, FDMS3604AS $1.62 for 1K units.
For more information, visit: www.fairchildsemi.com.