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  Date: 28/07/2013

Delta cuts power loss by using SiC MOSFETs from Cree

Cree reports Delta Electronika BV has reduced the powersupply loss by 21% and component count by 45% by using its 1200 Volts silicon carbide (SiC) MOSFETs. Cree says it's silicon carbide MOSFETs which were released in March 2013 are seeing good response from its customers in applications such as high efficiency PV inverters and such power converter inverter applications. Cree claims it's SiC MOSFETs can save twice the power density over silicon technology.

“We are delighted to use Cree’s new SiC transistor in product series, as it improves both the efficiency and power density of our products,” said Job Koopmann, director of Delta Elektronika BV. “The switching behavior is outstanding, and controlling the MOSFET is simple and straightforward. This device is helping us to continue developing more-reliable products, which our customers expect from us.”

“We are pleased to have Delta Elektronika BV as one of the volume adopters of our newest generation of SiC MOSFETs,” said Cengiz Balkas, general manager, Cree Power and RF. “Delta Elektronika BV has a half-century legacy of producing some of the most-reliable, efficient and compact power supplies on the market. The industrial power-supply market, which values efficiency, reliability and power density, is a key market for SiC MOSFET technology. Our new, second-generation SiC MOSFET portfolio, which now includes a 160-mOhm MOSFET for the 5–10-kW market, is receiving strong market pull.”

Netherland based Delta Electronika BV designs and produces high-quality power supplies for industrial and automation use.

 
          
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