Date: 23rd Aug 2010
Intel and Micron to jointly develop 3bpc
NAND flash memory chip on 25nm process technology
Intel and Micron have introduced a 3-bit-per-cell (3bpc)
NAND flash memory on 25-nanometer (nm) process technology,
which they claim produces the industry's highest capacity,
smallest NAND device. The companies have sent initial product
samples to select customers. Intel and Micron expect to
be in full production by the end of the year.
This 3bpc NAND flash memory chip is designed by IM Flash
Technologies (IMFT) NAND flash joint venture, the 64-Gb,
or 8 gigabyte (GB), 25nm lithography stores three bits of
information per cell, rather than the traditional one bit
(single-level cell) or two bits (multi-level cell). This
device from Intel and Micron offers improved cost efficiencies
and higher storage capacity for USB, SD (Secure Digital)
flash card and consumer electronics markets. Flash memory
is primarily used to store data, photos and other multimedia
for use in capturing and transferring data between computing
and digital devices such as digital cameras, portable media
players, digital camcorders and all types of personal computers.
Intel says that this device is more than 20 percent smaller
than the same capacity of Intel and Micron's 25nm MLC, which
is currently the smallest single 8GB device in production
today. Small form-factor flash memory is especially important
for consumer end-product flash cards given their intrinsic
compact design. The die measures 131mm2 and comes in an
industry-standard TSOP package.
"With January's introduction of the industry's smallest
die size at 25nm, quickly followed by the move to 3-bit-per-cell
on 25nm, we continue to gain momentum and offer customers
a compelling set of leadership products," said Tom
Rampone, Intel vice president and general manager of Intel
NAND Solutions Group. "Intel plans to use the design
and manufacturing leadership of IMFT to deliver higher-density,
cost-competitive products to our customers based on the
new 8GB TLC 25nm NAND device."
"As the role of NAND memory continues to escalate
in consumer electronics products, we see the early transition
to TLC on 25nm as a competitive edge in our growing portfolio
of NAND memory products," said Brian Shirley, vice
president of Micron's NAND Solutions Group. "We are
already working to qualify the 8GB TLC NAND flash device
within end-product designs, including higher-capacity products
from Lexar Media and Micron."
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