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  Date: 20/10/2014

India born semiconductor researcher's work helped LED inventors who won nobel

The blue LED creation requires complex fabrication of hetero structures of compound semiconductor materials. Few atoms thick crystalline layer of one semiconductor material is laid over another crystalline substrate of different semiconductor material. The process to fabricate such hetero junctions was invented by Indian born scientist called Dr. Jay Narayan, a Professor of Materials Science and Engineering at North Carolina State University in US.

He is now awarded with 2014 North Carolina Award in Science in US. Dr. Jay Narayan is a alumni of IIT Kanpur, India.

He invented semiconductor fabrication process called domain matching epitaxy (DME), which led to creation of hetero structures of gallium nitride or any such compound semiconductor based nitrites and oxides on Sapphire. DME is well utilised in the fabrication of blue light LEDs and eventually white high-bright LEDs. His method/process help in reducing the defects in the semiconductor materials that affect LED efficiency.

Year 2014's Nobel physics prize was awarded to inventors of blue light LED. Year 2014's Nobel physics prize was awarded to Isamu Akasaki, of Meijo University in Nagoya and Nagoya University, Japan; Hiroshi Amano, of Nagoya University, Japan, and Shuji Nakamura of the University of California, Santa Barbara, CA.

Though LED is the most visible otherwise talked about invention, building nano sized hetero structures is finding use in multiple number of applications ranging from smart sensors to self assembled nano devices. Sensors built using thin-film hetero structures involving epitaxy can be used to sense radiation from harmful chemicals and substances.

Jay Narayan holds 40 U.S. patents and has published nine books and more than 500 papers in journals, which have over 20,000 citations (Google Scholar).
American Institute of Physics has highlighted Narayan’s highly cited paper (J. Appl. Phys. 87, 965 [2000] with over a thousand citations) on the development of GaN-based materials used in the Nobel Laureates’ work.

Narayan completed his master’s and Ph.D. from the University of California, Berkeley.
Author: Srinivasa Reddy N
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