Date: 25th Aug 2010
IXYS integrates SiC with super junction
MOSFET targeting fast switching apps
IXYS said it has sucessfully integrated its Silicon Carbide
(SiC) technology and the latest super junction MOSFET technology
into a single package to be used in fast switching power
supplies and solar inverter applications.
Currently the system designers in high frequency,
high efficiency applications are forced to consider using
separate discrete devices, often from different suppliers
complicating mechanical layouts and time to market. The
MKE range of products released by IXYS effectively integrates
these technologies into one part thereby reducing parasitic
inductance and its associated losses, stated Bradley
Green, VP of International Sales for IXYS. Our patented
ISOPLUS i4TM package, with its proven ruggedness based on
the internal DCB construction, enables the co-location of
the MOSFET and SiC diode thus also reducing real estate
requirements in power switching topologies that are getting
far more focused on not only reducing power losses but also
challenging the traditional restraints on power supply size.
It has better thermal impedance with lower weight than alternative
solutions that use a heavier copper lead frame and bulky
modules
The first product in the MKE range of devices is an ultrafast
boost chopper which integrates a super junction COOLMOS
CP MOSFET and a SiC boost diode integrated in the IXYS ISOPLUS
i4 package. The ISOPLUS technology gives the designer a
discrete package with ceramic, Direct Copper Bonded (DCB)
isolation. An example of this technology is the MKE11R600DCGFC
which integrates a 600V, COOLMOS MOSFET and a 12A 600V SiC
diode in boost chopper circuit topology which is a common
combination for Power Factor Correction (PFC) stages in
high switching applications. Because of the absence of minority
carrier injection of SiC there is no reverse recovery of
the boosting diode.
The advantages of this device as per IXYS are:
1. The use of ISOLPLUS packaging allows a mounting of MOSFET
and boost diode very close together thereby minimizing stray
inductance. The gate and source connections in these MOSFETs
are located side by side and are easily accessible.
2. This isolation has low thermal impedance and a higher
reliability in power cycling than standard copper based
solutions and non-isolated products.
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