Toshiba, one of the leading provider of siliconcarbide power switching MOSFETs is continuously improving the performance of its latest SiC switching devices. It has announced third-generation siliconcarbide MOSFETs whose performance is significantly better than its previous second generation SiC MOSFETs.
The new series is called “TWxxNxxxC series”. Toshiba has already started shipping five 1200V and five 650V products of this family.
Toshiba says these new MOSFETs reduce on-resistance per unit area (RDS(ON)A) by about 43%, allowing the drain-source on-resistance * gate-drain charge (RDS(ON)*Qgd), an important index that represents the relationship between conduction loss and switching loss, to be lowered by about 80%, compared to its second-generation SiC MOSFETs. This switching performance improvement cuts the switching loss by about 20%, and lowers both on-resistance and switching loss.
Toshiba suggests these MOSFETs for range of high wattage power switching applications such as switching power supplies (servers, data center, communications equipment, electric vehicle charging stations, Solar PV inverters and uninterruptible power supplies (UPS).
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