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Rf-microwave
Date: 06-09-22

L-band GaN-on-SiC power amp deliver 60% up in power efficiency and 70% smaller in size

The new QPA2511 GaN-on-SiC power amplifier module (PAM) from Qorvo deliver 60% power added efficiency in a circuit size 70% smaller than equivalent two-stage solutions.

QPA2511 available in a surface mount package, a better time-saving option in today's electronics manufacturing to save from additional process.

Doug Cole, general manager of Qorvo's Defense and Aerospace business, said, "Qorvo consistently answers the challenge of providing unique, highly reliable and effective solutions using GaN-on-SiC technology for L-band and many other applications. Our decades of experience with defense programs and reputation for quality make us a preferred vendor for radar manufacturers in the U.S. and around the world."

Brief specifications:

Frequency Range (GHz): 1.2-1.4
Output Power (Watt):     100     
Gain (dB):     29
PAE (%): 60
Vd (V):     50
Pkg size (mm):     25 x 12.5

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