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Date: 23-04-22

Opto Diode launched infrared emitter and also a detector

Optoelectronic sensor specialist Opto Diode has launched a new infrared light-emitting diode packaged in a highly heat dissipating robust TO-66 package. The new device OD-669 is made using the material gallium aluminum arsenide (GaAlAs) and can emit infrared in the wavelength of 880 nm at a half intensity beam angle typically of 120 degrees. Nine IR emission chips are connected in series and is packaged in a electrically-isolated case. These devices are suggested for covert aircraft lighting or covert anti-collision lighting in aviation applications.

At a current of 300 mA, this device can produce output power in the range of 390 mW to 500 mW (typical).  With a spectral bandwidth at 50% is 80 nm, this device forward voltage is in the range of 13.5 volts (typical) to 15 volts (maximum) and a  reverse breakdown voltage of minimum 5 volts and 30 volts (typical). Equivalent Capacitance is 11 Pf and a rise time and fall time is typically 3 μsec. Thermal parameters include the storage and operating temperature ranges of -55 °C to 100 °C and the maximum junction temperature of 100 °C.

You can find more data at: https://optodiode.com/pdf/OD669DS.pdf.

A few weeks earlier to the above products announcement, Opto Diode has also announced the new BXT2S-68TE, a thermoelectrically-cooled (TEC), two-stage infrared (IR) detector  for applications such as  gas analysis, emissions monitoring, and process control.

With an active area of 6 mm x 6 mm (36 mm²), this new lead selenide (PbSe) material based infrared sensor available in TO8 package with a flat sapphire window.

Opto-Diode offering wide choice of devices with Peak sensitivity Wavelength range  starting from  3.6 μm  to  3.8 μm,and on the other side devices with Peak sensitivity Wavelength range of 4.3 μm to 4.5 μm. The responsivity of these devices is in the range of from 1.65 x 10 4 V/W (minimum) to 2.5 x 10 4 V/W (typical).
The device features minimum detectivity (D) of 1.5 x 1010 , resistance ranges from 1.0 to 15.0 Mohms, and a typical response time of 12 μsec.

Opto Diode says its B-Series cooled IR detectors offer superior sensitivity for extremely low-level signal detection and exceptional stability in environments where fluctuating temperatures exist. They are ideal for applications such as spectroscopy, process control, gas analysis and emissions monitoring.

The BXT2S-68TE element operating temperature is -25 °C; absolute ratings for storage and operating temperatures range from -40 °C to +85 °C.

For more details visit https://optodiode.com/pdf/B-Series_IR-DetectorsDS.pdf

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