ROHM developed dual-MOSFET products (Nch+Pch) featuring ±40V/±60V withstand voltages, QH8Mx5/SH8Mx5 series. The devices are ideal for driving motors in base stations (cooling fans) and industrial applications such as factory automation equipment requiring 24V input.
In recent years, MOSFETs are increasingly required to ensure sufficient margin against voltage fluctuations by providing 40V and 60V withstand voltages to support 24V input required for motors used in industrial equipment and base stations. Furthermore, MOSFETs are expected to deliver higher speed switching together with lower ON resistance to further improve the efficiency and miniaturization of motors.
In response, ROHM developed its 6th generation 40V/60V MOSFETs utilizing the latest precision processes for the NchMOSFETs, following the release of the latest generationPch MOSFETs announced at the end of last year. This combination allows ROHMto provide class-leading dual Nch+Pch MOSFETs that deliver the ±40V/±60V withstand voltage required for 24V input. Moreover, the company developed also the +40V/+60V QH8Kxx/SH8Kxx (Nch+Nch) series to support a wider range of needs. (12 models in total ofNch+Pch and Nch+Nch)
The QH8Mx5/SH8Mx5 series utilizes original latest processes to achieve class-leadinglower ON resistance, 61% lower than the PchMOSFETs in dual MOSFETs products in the ±40V class. This contributes to significantly lower power consumption in a variety of applications.Furthermore, integrating 2 devices into a single package contributes to miniaturize applications by reducingmounting area and decrease the workload required for component selection (combining Nch and Pch).
Next, ROHM will continue to expand the lineup to include 100V and 150V products for industrial equipment that demands higher voltages, contributingto the market requirements for lower power consumption and size reduction ofa wide variety of applications.
1.Achieves class-leadinglow ON resistance
Utilizing the latest processes allows us to develop best-in-class dual MOSFETs that reduce ON resistance by up to 61% and 39% in the Pch and NchMOSFETs, respectively, compared with competitor ±40V products. This contributes to significantly lower power consumption in a variety of applications.
2. Dual-product configuration contributes to greater miniaturization while reducing design load
Integrating two MOSFETs in a single package reduces application size along with the design load required for device selection. In terms of miniaturization, replacing existing dual Nch+Pch SOP8 products with these new TSMT8 models decreases mounting area by up to 75%.
Combining these new products with ROHM’s market-proven pre-driver ICs for single-/three-phase brushless motorsmakes it possible to consider even smaller motors with lower consumption and quieter drives. By providing total support for peripheral circuit design that marries our dual-MOSFET series with pre-driver ICs, ROHM is able to offerthe best motor drive solution for customer needs.
■ QH8MC5 (±60V Nch+Pch Dual MOSFET) + BD63001AMUV (3-Phase Brushless Motor Pre-driver IC)
■ SH8KB6 (+40V Nch+Nch Dual MOSFET) + BM62300MUV (3-Phase Brushless Pre-driver IC)
■ SH8KB6 (+40V Nch+Nch Dual MOSFET) + BD63002AMUV (3-Phase Brushless Pre-driver IC)
Nch+Pch Dual MOSFETs
Pricing:$0.90/unit (samples, excluding tax)
Availability:In mass production
■ Fan motors for base stations and industrial equipment (i.e.factory automation, robots)
■ Fan motors for large-scale consumer devices
MOSFET (Metal Oxide Semiconductor Field Effect Transistor)
The most commonly used structure in FETs.Often adopted as switching elements.
Pch MOSFET: A type of MOSFET that conducts when a negative voltage is applied to the gate relative to the source.This allows it to be driven with a voltage lower than the input voltage, simplifying circuit configuration.
Nch MOSFET: A type of MOSFET that conducts when a positive voltage is applied to the gate relative to the source.The smaller drain-source ON resistance compared with Pch MOSFETs results in lower steady state loss.
The resistance value between the Drain and Source of a MOSFET during operation. The smaller this value is, the lower the (power) loss during operation.
News Source: Rohm