Mitsubishi Electric is sampling from Jun 30 2015 its new T series power semiconductor modules based on its 7th gen insulated-gate bipolar transistors (IGBTs), comprising three different packages and 48 models in total. Mitsubishi says the new modules realize improved power loss and reliability for general-purpose inverters, elevators, uninterruptible power supplies (UPS) and other industrial equipment.
Mitsubishi exhibiting these modules at Power Conversion Intelligent Motion (PCIM) Europe 2015 in Nuremberg, Germany from May 19 to 21 and also plan to exhibit at MOTORTECH JAPAN 2015 during TECHNO-FRONTIER 2015 in Japan from May 20 to 22, and PCIM Asia 2015 in China from June 24 to 26.
Product Features highlights:
1)Reduced power loss thanks to seventh-generation IGBT and seventh-generation diode
--Seventh-generation CSTBT1chip achieves low power loss and low EMI noise.
--Relaxed Field of Cathode (RFC) diode chip incorporating new backside diffusion process achieves low power loss and suppression of recovery-voltage surge.
2)Reliability of de facto standard package are improved by latest package technology
--The internal structure is improved, keeping compatibility with de facto standard package.
--Integration of insulation and copper base in the substrate, along with improved internal electrode construction, helps to increase thermal cycle life3 and lower internal inductance, leading to more reliable equipment performance.
Sample shipment:
| Package | Voltage Rating | Current Rating | Shipment |
| NX-type Solder Pin Package |
650V | 100, 150, 200, 300, 450, 600A | From June 30 |
| 1200V | 100, 150, 200, 225, 300, 450, 600, 1000A | ||
| NX-type Press Fit Pin Package |
650V | 100, 150, 200, 300, 450, 600A | |
| 1200V | 100, 150, 200, 225, 300, 450, 600, 1000A | ||
| Standard-type Package |
650V | 100, 150, 200, 300, 400, 600A | |
| 1200V | 100, 150, 200, 300, 450, 600A |
