Cree shipped 2M+ GaN transistors for use in cellular wireless
Cree has disclosed that it has shipped more than two million GaN high electron mobility transistors (HEMT) for cellular telecommunications. GaN HEMT devices are used in transmitter amplifiers to reduce power consumption, size, and increase bandwidth capabilities.
Cree quotes "The world’s mobile networks are reported to consume about 120TWh of electricity per year (for an average cost of US$14.4 billion), and 50 percent of the networks power is consumed by power amplifiers and associated components. Consequently, improved power amplifier efficiency can result in considerable energy savings."
“Wireless telecommunication leaders are leveraging the performance advantages of Cree’s GaN HEMTs,” said Tom Dekker, director sales and marketing, Cree RF Business Unit. “We are very pleased we achieved our two millionth GaN HEMT cellular telecom shipment milestone. GaN HEMT prices have greatly improved and are now a viable alternative to Si LDMOS transistors for cellular telecom amplifiers. We target continued growth of our telecommunication volumes.”