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  Date: 12/11/2012

Fujitsu to start volume production of GaN power devices by the 2nd half of 2013

Fujitsu Semiconductor has achieved high output power of 2.5kW in server power-supply units equipped with gallium-nitride (GaN) power devices built on a silicon substrate. Fujitsu is exhibiting these devices at Embedded Technology 2012 Conference and Exhibition (Nov. 14-16 at the Pacifico Yokohama Convention Center in Japan), and to start volume production of the GaN power devices by the second half of 2013.

Fujitsu Semiconductor plans to commercialize GaN power devices on a silicon substrate, increasing the diameters of the silicon wafers and enabling low-cost production. The company began work on GaN technology in 2009 and has provided specific power-supply-related partners with sample GaN power devices since 2011. Since then, Fujitsu has worked on optimizing them for use in power supply units.

Fujitsu developed device technologies, such as optimizing the design of electrodes to control the rise of on-resistance during switching, and devising a circuit layout for power supply units that can support high-speed switching of GaN-based devices.

Fujitsu Semiconductor created a prototype server power-supply unit incorporating a power-factor-correction circuit based on GaN technology that achieved output power of 2.5kW.

Fujitsu Semiconductor has established a mass-production line for 6-inch wafers at its Aizu-Wakamatsu plant, and will begin full-scale production of GaN power devices in the second half of 2013.

 
          
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