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  Date:12th July 2011

Implant-free quantum-well SiGe pFETs for low power and high performance semiconductor devices

Imec has announced that it has successfully fabricated implant-free quantum-well (IF-QW) pFETs with an embedded silicon-germanium (SiGe) source/drain offering excellent short channel control, record logic performance to address the market demand of high performance but low power semicondcutor ICs. Imec claims it has benchmarked this tech against various competing technologies to find competitive results. These devices were also demonstrated at low operating voltage. Imec finds this device architecture is a viable option for the 16nm technology node and beyond.

SiGe (silicon-germanium) based semiconductor devices with a high Ge content offer high mobility. IF-QW concept with a buried SiGe channel meets the performance requirements of smaller gate length and better gate control and vary less with key electrical parameters.

Imec now presents the 2nd generation of SiGe45% IF-QW pFETs, processed on standard 300mm STI wafers. Compared to earlier IF-QW devices, the raised SiGe and Si substrate are recessed and replaced with a thick SiGe25% epi-layer to form the source/drain electrodes. Also, imec has developed process modules that minimize local variations and maximize the device performance.

Imec says this has resulted in an excellent short channel control, with a drain induced barrier lowering of ~110mV/V at 35nm-LG and a record 1mA/µm-Ion at -1V. For lower operating voltages, an increased performance was demonstrated. The devices were benchmarked at various operating voltages against state-of-the-art technologies such as SOI nFETs or SiGe-FET, showing at least equivalent results, says Imec. These results show that SiGe IF-QW devices with embedded source drain form a promising architecture for integration on bulk Si, from the 16nm node onwards, adds Imec.


 
          
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