Date: 25th Aug 2010

IXYS integrates SiC with super junction MOSFET targeting fast switching apps

IXYS said it has sucessfully integrated its Silicon Carbide (SiC) technology and the latest super junction MOSFET technology into a single package to be used in fast switching power supplies and solar inverter applications.

“Currently the system designers in high frequency, high efficiency applications are forced to consider using separate discrete devices, often from different suppliers complicating mechanical layouts and time to market. The MKE range of products released by IXYS effectively integrates these technologies into one part thereby reducing parasitic inductance and its associated losses,” stated Bradley Green, VP of International Sales for IXYS. “Our patented ISOPLUS i4TM package, with its proven ruggedness based on the internal DCB construction, enables the co-location of the MOSFET and SiC diode thus also reducing real estate requirements in power switching topologies that are getting far more focused on not only reducing power losses but also challenging the traditional restraints on power supply size. It has better thermal impedance with lower weight than alternative solutions that use a heavier copper lead frame and bulky modules”

The first product in the MKE range of devices is an ultrafast boost chopper which integrates a super junction COOLMOS CP MOSFET and a SiC boost diode integrated in the IXYS ISOPLUS i4 package. The ISOPLUS technology gives the designer a discrete package with ceramic, Direct Copper Bonded (DCB) isolation. An example of this technology is the MKE11R600DCGFC which integrates a 600V, COOLMOS MOSFET and a 12A 600V SiC diode in boost chopper circuit topology which is a common combination for Power Factor Correction (PFC) stages in high switching applications. Because of the absence of minority carrier injection of SiC there is no reverse recovery of the boosting diode.

The advantages of this device as per IXYS are:
1. The use of ISOLPLUS packaging allows a mounting of MOSFET and boost diode very close together thereby minimizing stray inductance. The gate and source connections in these MOSFETs are located side by side and are easily accessible.
2. This isolation has low thermal impedance and a higher reliability in power cycling than standard copper based solutions and non-isolated products.