Date: 17th Feb 2010
Fujitsu and University of Toronto developed
reliable read-method for MRAM
Fujitsu and University of Toronto have jointly developed
a high-reliability read-method for use with spin-torque-transfer
(STT) MRAM, non-volatile memory that could be used as an
alternative to flash memory. This new method is suitable
for compact and low-power electronic devices.
Many electronic devices such as mobile phones or PDAs use
microcontrollers with embedded flash memory, which allows
onboard software to be rewritten. However, NOR flash memory
used in such microcontrollers is nearing the physical limits
of its miniaturization, which has led to research on various
types of memory that could replace NOR flash memory.
STT MRAM uses memory storage elements that take advantage
of the effect in which a current that is passed through
a magnetic material such as a magnetic tunnel junction (MTJ)
reverses its direction of magnetization. Passing a current
through the MTJ causes its direction of magnetization to
switch between a parallel or anti-parallel state, which
has the effect of switching between low resistance and high
resistance. Because this can be used to represent the 1s
and 0s of digital information, STT MRAM can be used as a
non-volatile memory.
For more details visit www.fujitsu.com
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