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   Date: 17th Feb 2010

Fujitsu and University of Toronto developed reliable read-method for MRAM

Fujitsu and University of Toronto have jointly developed a high-reliability read-method for use with spin-torque-transfer (STT) MRAM, non-volatile memory that could be used as an alternative to flash memory. This new method is suitable for compact and low-power electronic devices.

Many electronic devices such as mobile phones or PDAs use microcontrollers with embedded flash memory, which allows onboard software to be rewritten. However, NOR flash memory used in such microcontrollers is nearing the physical limits of its miniaturization, which has led to research on various types of memory that could replace NOR flash memory.

STT MRAM uses memory storage elements that take advantage of the effect in which a current that is passed through a magnetic material such as a magnetic tunnel junction (MTJ) reverses its direction of magnetization. Passing a current through the MTJ causes its direction of magnetization to switch between a parallel or anti-parallel state, which has the effect of switching between low resistance and high resistance. Because this can be used to represent the 1s and 0s of digital information, STT MRAM can be used as a non-volatile memory.

For more details visit www.fujitsu.com

          
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