Date: 29th Dec 09
Infineon and Fairchild Semiconductor settle
patent dispute on power transistors
Infineon and Fairchild Semiconductor have settled a patent
infringement lawsuit. Infineon initiated the lawsuit in
November 2008 in the U.S. District Court for the District
of Delaware. The patents in the suit and counter suit consisted
of fourteen patents related to super-junction power transistors
along with trench power MOSFETs and IGBT power transistors.
The lawsuit has been settled through a broad patent cross
license relating to semiconductor technology. As part of
the agreement, Fairchild will make payments to Infineon.
The specific terms and conditions of the agreement are confidential.
Infineon and Fairchild will inform the U.S. District Court,
District of Delaware, that they had reached a settlement
and will file a stipulation of dismissal.
Infineon says, it is currently in patent licensing discussions
with a number of semiconductor companies. Infineon views
such discussions as essential to the continuing protection
of its intellectual property and business interests.
Both Infineon and Fairchild are leading vendors of discrete
power semiconductor devices. Infineon is ranked number one
in power semiconductor market for several years. Fairchild
can be estimated to be in 3rd position in discrete power
semiconductor market behind ST Microelectronics.