ee Herald                                   
Home | News | New Products | India Specific | Design Guide | Sourcing database | Student Section | About us | Contact us | What's New
Processor / MCU / DSP
Memory
Analog
Logic and Interface
PLD / FPGA
Power-supply and Industrial ICs
Automotive ICs
Cellphone ICs
Consumer ICs
Computer ICs
Communication ICs (Data & Analog)
RF / Microwave
Subsystems / Boards
Reference Design
Software / Development kits
Test and Measurement
Discrete
Opto
Passives
Interconnect
Sensors
Batteries
Others

News

   10th Mar 09

 Samsung producing NAND flash chips in 40-nm process technology

Samsung Electronics has begun using 40-nanometer (nm) process technology to produce an eight-gigabit (Gb) Flex-OneNAND fusion memory chip. Samsung said in its press release, by adopting advanced 40nm class technology, Samsung achieves an increase in productivity of up to 180 percent over the first Flex-OneNAND, a 4Gb device designed on 60nm-class technology.

A month back, another NAND flash leader Toshiba has also announced breakthroughs in multi-bit-per-cell technology for NAND flash memories. In the 32 nanometer (nm) generation, Toshiba has realized a 3-bit-per-cell 32 gigabit (Gb)1 chip with the world-smallest die size, and smaller than a 2-bit-per-cell 16Gb chip fabricated with 43nm technology, which is currently in the market. These chips are to be mass-produced in the second half of CY2009. Toshiba also fabricated the world's first 64Gb chip that applies 4-bit-per-cell technology at the 43 nm process generations.

Both these companies through their high capacity flash memory chips are sure to bring down the traditional disk drive market faster. The Solid State Drive (SSD) market can be expected to take off more significantly once the 40nm and 32nm flash memory chips comes out in volumes.




          
Events
Advertise
Send News
Send Article
Feedback
eeherald.com
India Search
electronic components
Home | News | New Products | India Specific | Design Guide | Sourcing database | Student Section | About us | Contact us | What's New
©2006 Electronics Engineering Herald