Laser diode for 100G CWDM4 data center is stable over wider temperature
CEL said it has made available Renesas' new series of semiconductor Laser Diodes, the “NX6375AA Series” into North America. The new laser diode series NX6375AA is designed for use in reliable high-speed optical transceivers and optical modules connecting high performance cloud computers. The newly developed direct modulation distributed feedback Laser Diodes support 25 Gbps × four wavelengths operation as the light sources in 100 Gbps optical transceivers that are used for communication between servers and routers installed in data centers. NX6375AA is available in production volumes.
Due to very fast growth in IOT which requires cloud computing with faster data speed, the demand for 100 Gbps systems will increase and to fast replace 40 Gbps systems.
CEL Claims NX6375AA Series is the industry’s first to achieve stable operation at up to 28 Gbps per wavelength over an operating temperature range of Tc = -5°C to 85°C. the reason for such wide temperature operation is due to use of material called aluminum gallium indium arsenic (AlGaInAs) in the laser diode.
The other key features include: the new Laser Diodes support 100 Gbps with four wavelengths, but can also support up to 112 Gbps systems.
The four wavelengths in the LASER DIODE series are 1271, 1291, 1311, and 1331 nanometer (nm), which support the wavelength spacing of the CWDM.
Renesas used narrow width selection growth technology for the wafer crystal growth, controlled crystal defects in the active layer, and formed a protective aluminum oxide layer (Renesas’ unique technology). Since aluminum oxidation can be controlled during fabrication, these Laser Diodes achieve the industry leading mean time to failure (MTTF) level of 100,000 hours, assuring a high reliability, discloses CEL.