Fairchild Semiconductor has introduced FDMQ86530L 60V quad-MOSFET power electronics device with four 60V N-Channel MOSFETs which said to improve the conduction loss and efficiency of the conventional diode bridge providing a ten-fold improvement in power dissipation. This device suggested for 12 and 24V AC applications measures 4.5 x 5.0 mm in MLP 12-lead package does not require heat sink.
Max RDS(ON) = 17.5 milli ohms at VGS = 10V, ID = 8A
Max RDS(ON) = 23 milli ohms at VGS = 6V, ID = 7A
Max RDS(ON) = 25 milli ohms at VGS = 4.5V, ID = 6.5A