Board to evaluate eGaN FETs for power electronics design
Date: 06/02/2013
Efficient Power Conversion Corporation has made available of the EPC9004 development board for helping power electronics designers to move from silicon power transistors to eGaN FETs easily.
The EPC9004 development board is a 200 V peak voltage, 2 A maximum output current, half bridge featuring the EPC2012 eGaN FET. The EPC2012 is used in combination with the UCC27611 high-speed gate driver from Texas Instruments.
The EPC9004 includes critical components such as dedicated gate driver, on a single 2” x 1.5” board that can be easily connected into any existing converter. Probe points are provided on the board for simple waveform measurement and efficiency calculation.
The 200 V EPC2012 eGaN FET is ideal for use in applications such as wireless charging, magnetic resonance imaging (MRI), and low RF frequency applications such as smart meter communications.
The EPC9004 development board is priced at $95.00 and is available for immediate delivery from Digi-Key at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en
