Date: 14th July 2011
IR offers dual HEXFET MOSFETs in 2mmx2mmx1mm
measuring PQFN package
International Rectifier has announced the enhancement
of its PQFN package offering; PQFN 2mm x 2mm and PQFN 3.3mm
x3.3 mm package for low power applications.
International Rectifier explains the new packages integrate
two HEXFET MOSFETs utilizing IR's latest silicon technology
to deliver a high density, low losses, flexible in either
common drain or half-bridge topologies, cost effective solution
for low power applications including smart phones, tablet
PCs, camcorders, digital still cameras, DC motors and wireless
inductive chargers as well as notebook PC, server and Netcom
equipment.
The IRLHS6276, for example, features two MOSFETS each with
a typical on-state resistance (RDS (on)) of 33 milliohms
in only a 4-mm2 area.
"The new PQFN dual devices offer customers a high
density, cost effective solution for switching and DC applications.
With the addition of these new packages, IR now offers a
broad low-voltage PQFN portfolio that encompasses both N-
and P-Channel, 20 V and 30 V, 4.5 V or 2.5 V minimum drive
capability, single and dual devices that all deliver extremely
low RDS (on)," said Stéphane Ernoux, director,
IR's Power Management Devices Business Unit.
The Dual PQFN family includes P-Channel devices for use
in the high side of load switches, providing a simpler drive
solution. Featuring a low profile of less than 1 mm, the
devices are compatible with existing Surface Mount Techniques,
and RoHS compliant says IR.
Available: Now
Price: $0.33 each for 1K units
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