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Date: 14th July 2011

IR offers dual HEXFET MOSFETs in 2mmx2mmx1mm measuring PQFN package

International Rectifier has announced the enhancement of its PQFN package offering; PQFN 2mm x 2mm and PQFN 3.3mm x3.3 mm package for low power applications.

International Rectifier explains the new packages integrate two HEXFET MOSFETs utilizing IR's latest silicon technology to deliver a high density, low losses, flexible in either common drain or half-bridge topologies, cost effective solution for low power applications including smart phones, tablet PCs, camcorders, digital still cameras, DC motors and wireless inductive chargers as well as notebook PC, server and Netcom equipment.
The IRLHS6276, for example, features two MOSFETS each with a typical on-state resistance (RDS (on)) of 33 milliohms in only a 4-mm2 area.

"The new PQFN dual devices offer customers a high density, cost effective solution for switching and DC applications. With the addition of these new packages, IR now offers a broad low-voltage PQFN portfolio that encompasses both N- and P-Channel, 20 V and 30 V, 4.5 V or 2.5 V minimum drive capability, single and dual devices that all deliver extremely low RDS (on)," said Stéphane Ernoux, director, IR's Power Management Devices Business Unit.

The Dual PQFN family includes P-Channel devices for use in the high side of load switches, providing a simpler drive solution. Featuring a low profile of less than 1 mm, the devices are compatible with existing Surface Mount Techniques, and RoHS compliant says IR.

Available: Now
Price: $0.33 each for 1K units


 
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