Date: 10th Jun 2011
LDMOS RF power transistors from NXP offers
power and efficiency advantage
NXP Semiconductors N.V. has introduced its eighth generation
(Gen8) LDMOS RF power transistors for wireless base stations
- allowing signal bandwidths up to 60MHz and providing optimized
I/O matching structures.
These doherty mode supporting transistors are being sampled
for applications up to 960MHz. The second wave of products
will cover GSM-WCDMA-LTE at 1800, 1900 and 2100 MHz and
will sample during 2011.
NXP says compared to the previous generation, Gen8 increases
power density by 15 percent and improves power efficiency
by around 5 percent (depending on the application). Using
these SOT502 packaged transistors peak power levels above
500 watts (P3dB) are possible.
NXP's LDMOS technology used in RF power transistors typically
runs at 28 V to 32 V, and delivers performance up to 3.8
GHz.
Christophe Cugge, director of marketing, base station power
amplifiers, NXP Semiconductors, said: "Wireless base
station technology is continuously evolving to follow the
growing use of bandwidth-intensive applications. NXP's Gen8
LDMOS offers base station OEMs low-cost, highly efficient
technology to manufacture multi-standard, future-proof solutions
with better production yields through tighter specifications
for mass production. NXP has several Gen8 LDMOS reference
designs in development, including asymmetric and 3-way Doherty
amplifiers."
Availability: Gen8 LDMOS transistors will be available
from Q3 2011.
NXP Semiconductors N.V. has also unveiled its new XR family
of "eXtremely Rugged" LDMOS RF power transistors.
NXP says the XR family is designed tough-as-nails to withstand
the harsh fault conditions often found in applications such
as industrial lasers, metal etching and concrete drilling.
The new BLF578XR is a rugged version of NXP's ubiquitous
BLF578, an RF power transistor workhorse for a multitude
of broadcast and ISM applications. In most applications,
the BLF578XR will be a simple plug-in replacement for the
BLF578.
Technical Features
Frequency range: 0 to 500 MHz
Gain: 24 dB at 225 MHz
Efficiency: 70 % at 225 MHz
VSWR: 125:1 at 1200 W through all phases
Peak output power: 1400 W (pulsed)
Thermally enhanced: 0.14 K/W
Availability: NXP BLF578XR samples are available
now, with volume shipping to begin in Q3 2011.
Further information is available at: http://www.nxp.com/pip/BLF578XR.html
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