TriQuint Semiconductor solutions have released base transceiver
station (BTS) network devices targeting wireless infrastructure
market.
"We listened to our customers in developing these
products," said Vice President Brian P. Balut. "Consumer
demand for smartphones and tablets means more bandwidth
through the network. That leads to the requirement for greater
linearity in the RF chain. At the same time, our customers
want to minimize power consumption, and they want devices
that withstand spikes and other stresses that may occur
in the field. These two new products uniquely address all
these needs."
TriQuint's new base station devices, starting with the
0.25 Watt TQP7M9101 is designed to offer high gain and linearity
with very low current consumption of 88 mA (milliamps) in
a typical 5 Volt design. The 0.5-Watt TQP7M9102 is also
now available; it provides highly linear performance, low
current consumption and greater gain.
TriQuint has used its patented protection features in these
chips, which guard against ESD and DC over-voltage electrical
spikes. TriQuint also integrates RF over-drive protection
that reduces the chance of damage from high signal levels
often seen in systems employing digital pre-distortion linearization
techniques commonly utilized to meet 3G/4G BTS system requirements.
TriQuint's TQP7M9101 also integrates matching circuits that
eliminate the need externally.
"TriQuint regularly releases new amplifier and linear
gain blocks that offer useful improvements. They appreciate
that design requirements change all the time," said
Alexander Kopp, RF designer, Andrew Wireless Systems / CommScope,
Buchdorf, Germany. "A more linear RF signal is very
important, and with very low current drain, we can reduce
a system's thermal dissipation. The TriQuint team has offered
us great support."
TriQuint's two new amplifiers are ideal for 3G/4G wireless
infrastructure applications including base transceiver stations,
repeaters, boosters, tower-mounted amplifiers (TMAs), remote
radio heads, defense/ aerospace and other wireless systems
requiring high linearity and gain with low power consumption.
TriQuint's base station, microwave and defense/aerospace
innovations are to be displayed at the IEEE IMS / MTT-S
Conference and Exhibition (June 5-10, Baltimore, Maryland.)
Visit TriQuint at Booth #2218.
For information visit: www.triquint.com/rf.
Technical Details:
TQP7M9101: 0.25W high-linearity amplifier. Performance
at 2.1 GHz: 17.5 dB gain, 40 dBm OIP3 & 24.8 dBm P1dB
while consuming only 88 mA current from a 5V supply. Integrated
RF over-drive, DC over-voltage and Class 2 (2000V) HBM ESD
protection.
TQP7M9102: 0.5W high-linearity amplifier. Performance at
2.1 GHz: 17.8 dB gain, 43.5 dBm OIP3 & 27.5 dBm P1dB
while consuming only 137 mA current from a 5V supply. Integrated
RF over-drive, DC over-voltage and Class 2 (2000V) HBM ESD
protection.
