Radiation hardened power MOSFET first time from a European manufacturer

ST Microelectronics has introduced the first member of a family of power transistors that are fully qualified for use in electronic subsystems on board satellites and launchers.

According to the Satellite Industry Association, the global satellite industry is growing steadily and currently generates more than $160 billion in annual revenues. Although essential electronic equipment is built in various territories, including Europe and Asia, the majority of components certified for use in space originate from the USA. However, developed in conjunction with the support of the European Space Agency (ESA) and the Centre National d'Etudes Spatiales (CNES), ST's new family of radiation-hardened power MOSFETs is produced in Europe and fully qualified to ESCC (European Space Components Coordination) specifications.

ST says its move will not only increase the global supply of space-qualified components, but will also overcome trade restrictions that can delay project completion or prevent access to certain devices and markets. "This new Rad-Hard Power MOSFET family has been developed to meet space requirements and is available for the first time from a European manufacturer," said Ian Wilson, General Manager of ST's Power Transistors Division.

The new radiation-hardened power MOSFET family spans current ratings from 6A to 80A and comprises five N-channel and P-channel devices, including: the STRH100N10 and STRH8N10 and STRH40P10, which offer voltage ratings of 100V; and the STRH100N6 and STRH40N6 with voltage ratings of 60V. The 100-volt P-channel device has a current rating of 34A. With their low gate charge, a characteristic of ST's STripFET technology which enhances switching performance, they are ideal for use in DC power modules such as motor controllers and linear regulators, as well as line switches and e-fuses for current limiting.