Micron Technology Inc has announced that its next generation
reduced latency DRAM (RLDRAM 3 memory) is available now
in samples.
Key features of RLDRAM 3 as per Micron includes:
1.RLDRAM 3 is a high-bandwidth memory technology that enables
transfer of information across the network for high-performance
networking applications, including high-end routers and
switches that require back-to-back READ/WRITE operations
or completely random access, RLDRAM 3 memory is suitable
for 40 Gigabit Ethernet (GbE) and 100 GbE designs, packet
buffering and inspection, and lookup tables.
2. RLDRAM 3 memory offers improvements in speed, density,
latency and power consumption.
3. The proliferation of Internet-based video services like
IPTV and video on demand, combined with growth in mobile
applications and cloud computing, is driving the need for
a more efficient network infrastructure that can keep pace
with the amount of data being moved online.
4. RLDRAM 3 memory provides sustainable data rates up to
2133 megabits per second (Mb/s) and offers random access
latency of sub-10 nanoseconds.
5. It offers energy efficiency through familiar 1.2V IO
and 1.35V core voltage levels.
"At Micron, we recognize the pressure customers face
today to optimize their network technology to support the
growth in data volume and deal with the associated complexity
of the changing infrastructure," said Bruce Franklin,
Director of Networking and Storage Business Development
for Micron's DRAM Solutions Group. "RLDRAM 3 memory
is a low-latency, high-bandwidth solution that provides
plenty of headroom to accommodate our customers' evolving
networking memory requirements."
Micron has also announced that Integrated Silicon Solution,
Inc. (ISSI) will become an alternate supplier of Micron's
RLDRAM 3 memory, providing assurance of commercial volume
and longevity for networking customers.
"By working closely with Micron, we will be able to
support our customers' requests to provide RLDRAM 3 memory,"
said Pat Lasserre, ISSI Director of Strategic Marketing.
"With the addition of RLDRAM 3 to our product line,
we are excited to address customers' demands for long-term
support of specialized, high-performance memory technologies,
driven by networking standards like 100 GbE."
Micron is expected to begin production of RLDRAM 3 memory
during the second half of 2011.